Transient and Stationary Simulations for a Quantum Hydrodynamic Model

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2007,（6）
• 页码范围: 1437-1440
• 页数: 4页
• 语种: 英文

摘要

The transient and stationary characteristics of a one-dimensional quantum hydrodynamic model are comparatively studied for semiconductor charge transport in a resonant tunnelling diode. When the bias is not small, our numerical results show a deviation of the asymptotic transient solutions from the stationary ones. A dynamic instability accounts for such deviation. The stationary quantum hydrodynamic model is therefore unsuitable in general for simulating quantum devices.