Pressure effects in AlAs/InxGa1-xAs/GaAs resonant tunnelling diodes for application in micromachined sensors

• 来源期刊: 中国物理（英文版）
• 关键词: pressure effects RTDs micromachined sensors
• 年，卷（期）: 2007,（4）
• 页码范围: 1150-1154
• 页数: 5页
• 语种: 英文

摘要

This paper reports the current-voltage characteristics of [001]-oriented AlAs/InxGal-xAs/GaAs resonant tunnelling diodes (RTDs) as a function of uniaxial external stress applied parallel to the [110] and the [110] orientations,and the output characteristics of the GaAs pressure sensor based on the pressure effect on the RTDs. Under [110]stress, the resonance peak voltages of the RTDs shift to more positive voltages. For [110] stress, the peaks shift toward more negative voltages. The resonance peak voltage is linearly dependent on the [110] and [110] stresses and the linear sensitivities are up to 0.69 mV/MPa,-0.69 mV/MPa respectively. For the pressure sensor, the linear sensitivity is up to 0.37 mV/kPa.