Electrical Characteristics of Copper Phthalocyanine Thin-Film Transistors with Polyamide-6/Polytetrafluoroethylene Gate Insulator

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2007,（12）
• 页码范围: 3513-3515
• 页数: 3页
• 语种: 英文

摘要

Polyamide-6(PA 6)/polytetrafluoroethylene is studied as a potential gate dielectric for flexible organic thin film transistors.The salne method used for the formation of organic semiconductor and gate dielectric films greatly simplifies the fabrication process of devices.The fabricated transistors show good electrical characteristics.Ambipolar behaviour is observed even when the device is operated in air.