GaN MOS-HEMT Using Ultra-Thin Al2O3 Dielectric Grown by Atomic Layer Deposition

• 来源期刊: 中国物理快报(英文版)
• 年，卷（期）: 2007,（8）
• 页码范围: 2419-2422
• 页数: 4页
• 语种: 英文

摘要

We report a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with atomic layer deposited (ALD) Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 (2005) 063501] of Ye et al. By decreeing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of 100mS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional AlGaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.