Uniformity of Plasma Density and Film Thickness of Coatings Deposited Inside a Cylindrical Tribe by Radio Frequency Sputtering

• 来源期刊: 等离子体科学和技术(英文版)
• 年，卷（期）: 2008,（5）
• 页码范围: 560-564
• 页数: 5页
• 语种: 英文

摘要

Plasma surface modification of the inner wall of a slender tube is quite difficult to achieve using conventional means.In the work described here,an inner coaxial radio frequency (RF) copper electrode is utilized to produce the plasma and also acts as the sputtered target to deposit copper films in a tube. The influence of RF power,gas pressure,and bias voltage on the distribution of plasma density and the uniformity of film thickness is investigated.The experimental results show that the plasma density is higher at the two ends and lower in the middle of the tube.A higher RF power and pressure as well as larger tube bias lead to a higher plasma density.Changes in the discharge parameter only affect the plasma density uniformity slightly.The variation in the film thickness is consistent with that of the plasma density along the tube axis for different RF power and pressure.Although the plasma density increases with higher tube biases,there is an optimal bias to obtain the highest deposition rate.It can be attributed to the reduction in self-sputtering of the copper electrode and re-sputtering effects of the deposited film at higher tube biases.