Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes on quantum well widths

• 来源期刊: 中国物理B(英文版)
• 关键词: resonant tunnelling diode molecular beam epitaxy
• 年，卷（期）: 2008,（12）
• 页码范围: 4645-4647
• 页数: 3页
• 语种: 英文

摘要

This paper studies the dependence of Ⅰ - Ⅴ characteristics on quantum well widths in AlAs/In0.53Ga0.47As and AlAs/In0.53Ga0.47As/InAs resonant tunnelling structures grown on InP substrates. It shows that the peak and the valley current density in the negative differential resistance region are closely related with quantum well width. The measured peak current density, valley current densities and peak-to-valley current ratio of resonant tunnelling diodes are continually decreasing with increasing well width.