Photodetachment of H- in an electric field between two parallel interfaces

• 来源期刊: 中国物理B（英文版）
• 关键词: closed-orbit theory photodetachment cross section
• 年，卷（期）: 2008,（4）
• 页码范围: 1231-1236
• 页数: 6页
• 语种: 英文

摘要

By using the dosed orbit theory, the photodetachment cross section of H- in a static electric field between two parallel elastic interfaces is derived and calculated. It is found that the photodetachment cross section depends on the electric field and the distance between the ion and the elastic interface. The oscillation of the cross section becomes more complicated than in the case of H- near one elastic interface. The results show that near the detachment threshold,the influence of the additional interface can be neglected. But with the increase of the energy, its influence becomes great. At some energies, the cross sections display sharp peaks, contrasting with the staircase structure when only one interface exists. This study provides a new understanding of the photodetachment process of H- in the presence of external field and interfaces.