New Power Semiconductor Devices for Future Generations of Power Supplies

• 作者: Leo Lorenz
• 来源期刊: 电源世界
• 学科: 工学
• 关键词: 半导体器件 电源 高电压金属氧化物半导体场效应晶体管 碳化硅
• 年，卷（期）: 2008,（1）
• 页码范围: 21-27
• 页数: 7页
• 分类号: TN3

摘要

<正>Power Semiconductors are still the driving force for many power electronic systems.In this paper the development of the key power semiconductors devices for power supplies are shown,and their electrical performance discussed.Future directions of the major power semiconductor devices like the IGBT,Super Junction technology and SiC device will be explained.