Optical Emission Spectroscopy of Electron Cyclotron Resonance-Plasma Enchanced Metalorganic Chemical Vapor Deposition Process for Deposition of GaN Film

• 来源期刊: 等离子体科学和技术（英文版）
• 年，卷（期）: 2008,（1）
• 页码范围: 70-73
• 页数: 4页
• 语种: 英文

摘要

An investigation was made into the nitrogen-trimethylgallium mixed electron cy-clotron resonance (ECR) plasma by optical emission spectroscopy (OES). The ECR plasma en-hanced metalorganic chemical vapour deposition technology was adopted to grow GaN film on an α-Al2O3 substrate. X-ray diffraction (XRD) analyses showed that the peak of GaN (0002) was at 20 = 34.48°, being sharper and more intense with the increase in the N2: trimethylgallium(TMG) flow ratio. The results demonstrate that the electron cyclotron resonance-plasma enchanced met-alorganic chemical vapor deposition (ECR-MOPECVD) technology is evidently advantageous for the deposition of GaN fihn at a low growth temperature.