VUV/UV/X-Ray Excited Luminescent Properties of Eu3+ and Pr3+ Doped BiSbO4

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2008,（10）
• 页码范围: 3790-3793
• 页数: 4页
• 语种: 英文

摘要

Absorption spectra of BiSbO4 are studied. The electronic structure calculated by the DFT shows that BiSbO4 is a semiconductor, with direct band gap 2.96 eV, which is consistent with UV-visible diffuse reflectance experiment.The host lattice emission band is located at 440 nm under VUV excitation. Eu3+ and Pr3+ doped samples have high luminescence efficiency in emitting red and green light, respectively. From the partial density of states,Eu3+ doped emitting spectrum, and the host crystal structure parameters, the relationship between structure and optical properties is discussed. It is found that the Eu3+ ions occupied Bi3+ sites, and there could be an energy transfer from Bi3+ ions to RE3+ ions.