Electrical and deep levels characteristics of ZnO/Si heterostructure by MOCVD deposition

• 来源期刊: 中国物理B(英文版)
• 关键词: MOCVD ZnO/Si heterostructure PL spectra deep-level emission
• 年，卷（期）: 2008,（6）
• 页码范围: 2292-2296
• 页数: 5页
• 语种: 英文

摘要

ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition (MOCVD) at different total gas flow rates. The current versus voltage and temperature (I - V - T) characteristics, the deep-level transient spectroscopy (DLTS) and the photoluminescence (PL) spectra of the samples were measured. DLTS shows two deep-level centres of E1 (EC-0.13±0.02 eV) and E2 (EC-0.43±0.05eV) in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at EC-0.13±0.01 eV was also obtained from the I -T characteristics. It was considered to be the same as E1 obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of E1 was varied when the total gas flow rate was changed.