Radiation-induced resistance oscillation and instability in GaAS/A1GaAS heterostructure under transverse magnetic fields

• 来源期刊: 中国物理B(英文版)
• 关键词: heterostructure chaos bifurcation resistance oscillation
• 年，卷（期）: 2008,（6）
• 页码范围: 2010-2017
• 页数: 8页
• 语种: 英文

摘要

This paper studies dynamics of a modulation-doped GaAs/AlGaAs heterostructure under transverse magnetic fields and microwave radiations. It finds that negative differential conductivity, due to the real-space electron transfer and delayed dielectric relaxation of the interface potential barrier, can lead to complex behaviours when a relatively small magnetic field is applied. Quasiperiodicity, frequency-locking and the routes from period-doubling to chaos are found. Under a large magnetic field, however, two time-independent homogeneous steady states exist; and the longitudinal resistance of the system shows an interesting oscillation with period tuned by the ratio of microwave radiation frequency ω to the cyclotron frequency we and local minima at ω/ωc= integer + 1/4.