Effects of deposition pressure and plasma power on the growth and properties of boron-doped microcrystalline silicon films

• 来源期刊: 中国物理B（英文版）
• 关键词: boron-doped μc-Si:H films thin film solar cells Raman crystallinity dark conductivity
• 年，卷（期）: 2008,（4）
• 页码范围: 1394-1399
• 页数: 6页
• 语种: 英文

摘要

Using diborane as doping gas, p-dopedμc-Si:H layers are deposited by using the plasma enhanced chemical vapour deposition (PECVD) technology. The effects of deposition pressure and plasma power on the growth and the properties of μc-Si:H layers are investigated. The results show that the deposition rate, the electrical and the structural properties are all strongly dependent on deposition pressure and plasma power. Boron-doped ìc-Si:H films with a dark conductivity as high as 1.42Ω-1.cm-1 and a crystallinity of above 50% are obtained. With this p-layer,μc-Si:H solar cells are fabricated. In addition, the mechanism for the effects of deposition pressure and plasma power on the growth and the properties of boron-doped ìc-Si:H layers is discussed.