A Stable Porous Silicon Dielectric Reflector with a Photonic Band Gap Centred at 10μm

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2008,（4）
• 页码范围: 1317-1320
• 页数: 4页
• 语种: 英文

摘要

By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral region (centred at about 12 μtm). After proper oxidation process,the stable reflector structure, which can reflect electromagnetic wave from 8 μm to 12 μm (centred at 10 μm)within wide incidence angles (about 50°), is obtained. The wavelength shift of absorption peak of Si-H and Si-O shows the influence of oxidation process and indicates the stability of oxidized porous silicon dielectric reflector,which offers possible applications for the room temperature infrared sensor.