Effect of LaNiO3 Interlayer on the Dielectric Properties of Ba0.5Sr0.5TiO3 Thin Film on Si Substrate

• 来源期刊: 上海交通大学学报（英文版）
• 学科: 工学
• 年，卷（期）: 2009,（2）
• 页码范围: 133-136
• 页数: 4页
• 分类号: TM223
• 语种: 英文
• DOI: 10.1007/s12204-009-0133-0

摘要

In this study, (100)-oriented growth of Ba0.5Sr0.5TiO3 (BST) /LaNiO3 (LNO) stacks was obtained on Pt(lll)/SiO2/Si substrates by r.f. magnetron sputtering. The orientation of the subsequently deposited Ba0.5Sr0.5TiO3 thin film was strongly affected by the LNO under layer, and the BST thin film deposited on the (100)LNO-coated Si substrate was also found to have a significant (100)-oriented texture. Effects of LNO interlayer on the dielectric properties of BST thin films were investigated. As a result, the tunability of BST thin film was greatly improved with the insertion of (100)-oriented LNO under layer with proper thickness.