On the origin of dissimilar pore evolution on patterned and unpatterned (100) n-type silicon

• 来源期刊: 科学通报（英文版）
• 年，卷（期）: 2009,（7）
• 页码范围: 1143-1151
• 页数: 9页
• 语种: 英文
• DOI: 10.1007/s11434-009-0119-1

摘要

Via systematic investigation of the anodization of both patterned and unpatterned specimens, phe-nomena of pronounced discrepancy with respect to pore size, pore density and pore etch-rate were evidenced. Based on the detailed analysis of scanning electron microscope (SEM) micrographs and current-voltage curves, the competition between physical and chemical elements was found to be cru-cial to understanding the observations. The results indicate that the size, density and growth-speed of pores may act as an evident function of the initial morphology of the sample surface, despite a nearly fixed width of the space charge region. Electric-field effect as well as current-burst-model (CBM) was employed to interpret the underlying mechanism.