The study of a new n/p tunnel recombination junction and its application in a-Si:H/μc-Si:H tandem solar cells

• 来源期刊: 中国物理B（英文版）
• 关键词: double N layer tunnel recombination junction oxidation interface a-Si:H/μc-Si:H tandem solar cell
• 年，卷（期）: 2009,（4）
• 页码范围: 1674-1678
• 页数: 5页
• 语种: 英文

摘要

This paper reports that a double N layer(a-Si:H/μc-Si:H)is used to substitute the single microcrystalline siliconn layer(n-μc-Si:H)in n/p tunnel recombination junction between subcells in a-Si:H/μc-Si:H tandem solar cells.The electrical transport and optical properties of these tunnel recombination junctions are investigated by current-voltage measurement and transmission measurement.The new n/p tunnel recombination junction shows a better ohmic contact.In addition,the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance.The open circuit voltage and FF of a-Si:H/μc-Si:H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.