DESIGN AND FABRICATION OF INP MICRO-RING RESONANT DETECTORS

• 来源期刊: 光电子快报(英文版)
• 学科: 工学
• 年，卷（期）: 2009,（1）
• 页码范围: 6-10
• 页数: 5页
• 分类号: TN62
• 语种: 中文

摘要

The quantum efficiency and the transient response of the InP semiconductor micro-ring resonant detector are analyzed to get the optimum design parameters.Then the side coupling micro-ring resonant is fabricated using the InP semiconductor material based on the parameters.The micro-ring resonant cavity has the raius of 80 μm,waveguide width of 3 μm and the coupler gap of 1 μm.The test results show that the FSR is 0.75 nm,and the FWHM is 0.5 nm,which are consistent with the theoretical calculation results.