Effect of growth temperature on morphology, structure and luminescence of Tb-doped BN thin films

• 来源期刊: 中国物理B（英文版）
• 关键词: boron nitride rare earth doped photoluminescence thin film growth
• 年，卷（期）: 2009,（3）
• 页码范围: 1266-1269
• 页数: 4页
• 语种: 英文

摘要

This paper investigates the effect of growth temperature on morphology, structure and photoluminescence (PL) of Tb-doped boron nitride (BN) films grown by magnetron sputtering, and the relationships of growth-temperature-structure-PL by scanning electron microscopy, transmission electron microscopy and PL. The characteristic emission lines of the Tb3+ were observed in the PL spectra at room temperature. The 473-K-grown film is mainly consisted of amorphous BN particles. With the growth temperature increasing up to 1273 K, the amount of amorphous BN decreases, while the amount of turbostratic BN increases. Correspondingly, the PL intensities from the Tb3+ ions increase with the increase of temperature in the range of 473 1273 K.