Ultraslow Optical Solitons in a Coupled Double Quantum-Well Nanostructure
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摘要:
We demonstrate the formation of ultraslow dark optical solitons with a four-level scheme in an asymmetric semiconductor double quantum well (SDQW) structure based on intersubband transitions by using only a low-intensity pulsed laser radiation. With appropriate conditions we show numerically that the dark optical soliton can travel with a ultraslow group velocity V9 / c~-10-3. Such a semiconductor system is much more practical than its atomic counterpart because of its ftexible design and the controllable interference strength. This nonlinear optical process in the SDQW solid-state material may be used for the control technology of optical delay lines and optical buffers.