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摘要:
Dendritic pattern formation at the interface between liquid and solid is a commonly observed phenomenon in crystal growth and solidification process. The theoretical investigation of dendritic growth is one of the most profound and highly challenging subjects in the broad areas of intcrfacial pattern formation, condensed matter physics and materials science, preoccupying many researchers from various areas. Some longstanding key issues on this subject finally gained a breakthrough in the late of last century, via the 'Interracial Wave (IFW) Theory' on the ground of systematical global stability analysis of the basic state of dendritic growth. The original form of the IFW theory mainly focus on the investigation of various axi-symmetric unsteady perturbed modes solutions around the axi-symmctric basic state of system of dendritic growth. In reality, the system may allow various non-axi-symmctric, unsteady perturbed states. Whether or not the system of dendritic growth allows some growing non-axi-symmetric modes? Will the stationary dendritic pattern be destroyed by some of such non-axi-symmetric modes? Or, in one word, what is the stability property of the system, once the non-axi-symmetric modes can be evoked? The answers for these questions are important for the solid foundation of IFW theory. The present work attempts to settle down these issues and develop a three-dimensional (3D) interracial wave theory of dendritic growth. Our investigations verify that dendritic growth indeed allows a discrete set of non-axi-symmetric unstable global wave modes, which gives rise to a set of multiple arms spiral waves propagating along the Ivantsov's paraboloid.
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篇名 Three-dimensional interfacial wave theory of dendritic growth: (Ⅰ). multiple variables expansion solutions
来源期刊 中国物理B(英文版) 学科
关键词 Dendritic growth pattern formation interfacial waves selection criterion
年,卷(期) 2009,(2) 所属期刊栏目
研究方向 页码范围 671-685
页数 15页 分类号
字数 语种 英文
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Dendritic growth
pattern formation
interfacial waves
selection criterion
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中国物理B(英文版)
月刊
1674-1056
11-5639/O4
北京市中关村中国科学院物理研究所内
eng
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17050
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0
总被引数(次)
27962
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