Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs

• 来源期刊: 中国物理B（英文版）
• 关键词: multi-recessed microwave power 4H-SiC MESFETs
• 年，卷（期）: 2009,（7）
• 页码范围: 3018-3023
• 页数: 6页
• 语种: 英文

摘要

This paper reports that multi-recessed gate 4H-SiC MESFETs (metal semiconductor filed effect transistors) with a gate periphery of 5-mm are fabricated and characterized. The multi-recessed region under the gate terminal is applied to improve the gate-drain breakdown voltage and to alleviate the trapping induced instabilities by moving the current path away from the surface of the device. The experimental results demonstrate that microwave output power density,power gain and power-added efficiency for multi-finger 5-mm gate periphery SiC MESFETs with multi-recessed gate structure are about 29%, 1.1dB and 7% higher than those of conventional devices fabricated in this work using the same process.