Transport Properties of Si and Ge Liquid Semiconductor Metals

• 来源期刊: 理论物理通讯（英文版）
• 年，卷（期）: 2009,（3）
• 页码范围: 550-554
• 页数: 5页
• 语种: 英文

摘要

In the present article, we study the electrical resistivity p, the thermoelectric power (TEP) α, thermal conductivity σ, Knight-ShiFts and temperature coefficient of the Knight-Shifts of the liquid Si and Ge using the well known model potential for the first time. The structure factor used in the present work is derived From the Percus-Yevick (PY) theory. Various local field correction Functions are used to study the screening influence. The present results of resistivity are found in qualitative agreement with available experimental and theoretical whenever exists.