Influence of lateral size on dielectric properties of ferroelectric thin films with structure transition zones

• 来源期刊: 中国物理B（英文版）
• 关键词: ferroelectric thin film transverse Ising model dielectric properties
• 年，卷（期）: 2009,（7）
• 页码范围: 3054-3060
• 页数: 7页
• 语种: 英文

摘要

By taking into account structural transition zones near the lateral and thickness direction edges, this paper uses a modified transverse Ising model to study dielectric properties of a finite size ferroelectric thin film in the framework of the mean-field approximation. The results indicate that the influence of the lateral size on the dielectric susceptibility cannot be neglected and lateral structural transition zones could be a crucial factor that improves the mean susceptibility of the fixed size film.