GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2009,（6）
• 页码范围: 260-263
• 页数: 4页
• 语种: 英文

摘要

A bilayer stacked InAs/GaAs quantum dot structure grown by molecular beam epitaxy on an In0.05Ga0.95As metamorphic buffer is investigated.By introducing a InGaAs:Sb cover layer on the upper InAs quantum dots (QDs) layers,the emission wavelength of the QDs is extended successfully to 1.533 μm at room temperature,and the density of the QDs is in the range 0[4 x 109-8×109cm-2.Strong photoluminescence (PL) intensity with a full width at half maximum of 28.6meV of the PL spectrum shows good optical quality of the bilayer QDs.The growth of bilayer QDs on metamorphic buffers offers a useful way to extend the wavelengths of GaAs-based materials for potential applications in optoelectronic and quantum functional devices.