Air-stable ambipolar organic field effect transistors with heterojunction of pentacene and N,N' -bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide

• 来源期刊: 中国物理B（英文版）
• 关键词: organic heterojunction transistors ambipolar air-stable high electron affinity
• 年，卷（期）: 2009,（7）
• 页码范围: 3002-3007
• 页数: 6页
• 语种: 英文

摘要

Fabrication of ambipolar organic field-effect transistors (OFETs) is essential for the achievement of an organic complementary logic circuit. Ambipolar transports in OFETs with heterojunction structures are realized. We select pentacene as a P-type material and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide (PTCDI-TFB) as a n-type material in the active layer of the OFETs. The field-effect transistor shows highly air-stable ambipolar characteristics with a field-effect hole mobility of 0,15 com2/(V·s) and field-effect electron mobility of 0.031 cm2/(V·s).Furthermore the mobility only slightly decreases after being exposed to air and remains stable even for exposure to air for more than 60 days. The high electron affinity of PTCDI-TFB and the octadecyltrichlorosilane (OTS) self-assembly monolayer between the SiO2 gate dielectric and the organic active layer result in the observed air-stable characteristics of OFETs with high mobility. The results demonstrate that using the OTS as a modified gate insulator layer and using high electron affinity semiconductor materials are two effective methods to fabricate OFETs with air-stable characteristics and high mobility.