High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2010,（11）
• 页码范围: 79-81
• 页数: 3页
• 语种: 英文
• DOI: 10.1088/0256-307X/27/11/114201

摘要

We fabricate 1.5μm InGaAsP/InP tunnel injection multiple-quantum-well (TI-MQW) Fabry-Perot (F-P) ridge lasers.The laser heterostructures,including an inner cladding layer and an InP tunnel barrier layer,are grown by metal-organic chemical-vapor deposition (MOCVD).Characteristic temperature To of 160 K at 20℃ is obtained for 500-μm-long lasers.To is measured as high as 88K in the temperature range of 15-75℃.Cavity length dependence of To is investigated.