Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming

• 作者: 冯高明 刘波 宋志棠 封松林 徐成 王良咏 钟曼 陈一峰 陈小刚
• 来源期刊: 中国物理快报(英文版)
• 学科: 工学
• 关键词: 相变存储器 编程方法 运行情况 存储单元 增强性能 累积 Ge2Sb2Te5 PCM设备
• 年，卷（期）: 2010,（10）
• 页码范围: 186-189
• 页数: 4页
• 分类号: TP333 TP311.11
• 语种: 英文

摘要

A phase change memory (PCM) device, based on the Ge2Sb2Te5 (GST) material, is fabricated using the standard 0.18-μm CMOS technology. After serials of detailed experiments on the phase transition behaviors, we find that the RESET process is strongly dependent on the state of the inactive area and the active area affects the SET process dramatically. By applying a 5-mA current-voltage (I - V) sweep as initial operation, we can reduce the voltage drop beyond the active area during the RESET process and the overall RESET voltage decreases from 3 V plus to 2.5 V. For the SET operation, a non-cumulative programming method is introduced to eliminate the impact of randomly formed amorphous active area, which is strongly related to the threshold switching process and SET voltage. Combining the two methods, the endurance performance of the PCM device has been remarkably improved beyond 1 * 106 cycles.