A Novel Investigation on Using Strain in Barriers of 1.3 μm AlGaInAs-InP Uncooled Multiple Quantum Well Lasers

• 来源期刊: 理论物理通讯(英文版)
• 学科: 工学
• 关键词: 多量子阱激光器 AlGaInAs 非致冷 贸易壁垒 应变 InP 漏电流密度 方程组求解
• 年，卷（期）: 2010,（9）
• 所属期刊栏目: Electromagnetism, Optics, Acoustics, Heat Transfer
• 页码范围: 529-535
• 页数: 7页
• 分类号: TN248.4 TN215
• 语种: 英文

摘要

In this study we investigate strain effect in barriers of 1.3 μm AlGaInAs-InP uncooled multiple quantum welllasers.Single effective mass and Kohn-Luttinger Hamiltonian equations have been solved to obtain quantum states andenvelope wave functions in the structure.In the case of unstrained barriers,our simulations results have good agreementwith a real device fabricated and presented in one of the references.Our main work is proposal of 0.2% compressivestrain in the structure Barriers that causes significant reduction in Leakage current density and Auger current densitycharacteristics in 85℃.20% improvement in mode gain-current density characteristic is also obtained in 85℃.