We present the investigation on LaF_3/porous silicon(PS) system that has properties of both the materials to be applied in photonics.Epilayers of LaF_3 are grown on PS under different anodization conditions using electron-beam evaporation(EBE).The characteristics of the LaF_3/PS system are analyzed by X-ray diffraction(XRD),scanning electron microscope(SEM),energy dispersive X-ray spectroscopy(EDX),and photoluminescence(PL).XRD confirms the polycrystalline nature of the LaF_3 film.Nearly stoichiometric g...