Giant Temperature Coefficient of Resistance in ZnO/Si (111) Thin Films

• 作者: 周小芳 唐晓东 张辉 张鹏翔 李勇 陈清明
• 来源期刊: 中国物理快报(英文版)
• 学科: 工学
• 关键词: 负电阻温度系数 薄膜生长 氧化锌 脉冲激光沉积 沉积温度 T细胞受体 测辐射热计 TCR
• 年，卷（期）: 2010,（1）
• 页码范围: 257-259
• 页数: 3页
• 分类号: TQ171.112 O484.1
• 语种: 英文

摘要

Giant negative temperature coefficient of resistance (TCR) was observed in ZnO/Si (111) thin films. The films were grown using the pulsed laser deposition (PLD) technique, taking Si (111) wafer as substrates, with a substrate at the temperature below 450°C in the PLD. It is found that both TCR-temperature behavior and TCR value are strongly affected by deposition temperature. The maximal TCR value over -10.9%K-1 can be observed at the deposition temperature from 20°C to 350°C and reaches to -13%K-1 at deposition temperature 20°C where the film shows X-ray diffraction amorphous. The results suggest that the ZnO/Si films demonstrate great potentials when used in a low-cost, high-performance, non-cooling and highly sensitive bolometer.