A 10Gb/s Directly-Modulated 1.3μm InAs/GaAs Quantum-Dot Laser

• 作者: WANG Zhan-Guo 刘宇 季海铭 徐鹏飞 曹玉莲 杨涛 王占国 谢亮 谷永先
• 来源期刊: 中国物理快报(英文版)
• 学科: 工学
• 关键词: 量子点激光器 直接调制 砷化铟 GaAs 分子束外延生长 砷化镓衬底 波导激光器 蚀刻技术
• 年，卷（期）: 2010,（3）
• 页码范围: 181-183
• 页数: 3页
• 分类号: TN248.4 TN304.23
• 语种: 英文

摘要

We demonstrate 10 Gb/s directly-modulated 1.3 μm InAs quantum-dot (QD) lasers grown on GaAs substrates by molecular beam epitaxy. The active region of the QD lasers consists of five-stacked InAs QD layers. Ridge-waveguide lasers with a ridge width of 4 μm and a cavity length of 600 μm are fabricated with standard lithography and wet etching techniques. It is found that the lasers emit at 1293 nm with a very low threshold current of 5 mA at room temperature. Furthermore, clear eye-opening patterns under 10 Gb/s modulation rate at temperatures of up to 50oC are achieved by the QD lasers. The results presented here have important implications for realizing low-cost, low-power-consumption, and high-speed light sources for next-generation communication systems.