Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor

• 来源期刊: 中国物理B（英文版）
• 关键词: negative bias temperature instability drain bias electric field localized damage
• 年，卷（期）: 2010,（4）
• 页码范围: 400-405
• 页数: 6页
• 语种: 英文