Electrical Response of Flexible Vanadyl-Phthalocyanine Thin-Film Transistors under Bending Conditions

• 作者: 李春红 王丽娟 王海波 王贺 闫东航
• 来源期刊: 中国物理快报(英文版)
• 学科: 工学
• 关键词: 薄膜晶体管 弯曲变形 氧钒酞菁 电响应 柔性 陷阱密度 电子产品 WEG
• 年，卷（期）: 2010,（2）
• 页码范围: 303-306
• 页数: 4页
• 分类号: TN321.5 TH133.2
• 语种: 英文

摘要

Flexible vanadyl-phthalocyanine (VOPc) thin-film transistors are fabricated by the weak epitaxy growth (WEG) method. The devices show a mobility of 0.5 cm2/Vs, an on/off ratio of 105 and a low leakage current of 10-9 A. The performances exhibit strong dependence on bending conditions and reversible change can be found when the bending strain is less than 1.5%. This results from the change of the trap density calculated by subthreshold slopes. The results indicate that VOPc films fabricated by the WEG method have good durability to flexing and possess great potential in flexible electronics.