篇名 | Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes | ||
来源期刊 | 中国物理B(英文版) | 学科 | |
关键词 | p-GaN tantalum-doped indium tin oxide(Ta-doped ITO) Ohmic contact specific contact resistance | ||
年,卷(期) | 2010,(4) | 所属期刊栏目 | |
研究方向 | 页码范围 | 363-366 | |
页数 | 4页 | 分类号 | |
字数 | 语种 | 英文 | |
DOI |