Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process

• 来源期刊: 中国物理C：英文版
• 学科: 工学
• 关键词: 核辐射探测器 硅微条探测器 退火工艺 硼离子注入 制备 晶格缺陷 两步退火 大尺寸
• 年，卷（期）: 2011,（7）
• 页码范围: 635-637
• 页数: 3页
• 分类号: TL814|TG146.21
• 语种: 中文

摘要

The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed ins