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摘要:
A new configuration realizing water quality monitoring device using ISFET involving low power CMOS Integrated “Ion Sensitive Field Effect transistor (ISFET) – Operational Amplifier is presented. The study’s main focus is on simulation of power and performance analysis of ISFET device, which is used for water quality monitoring. This approach can improve calibration of device to a fairly wide range without the use of a high speed digital processor. The conventional device has a drawback of slow slew rate but in this novel design, the device has a better slew rate. A new slew rate enhancement (SRE) incorporated into a ISFET, which does not affect the small signal frequency response. The functionality of the circuit is tested using Tanner simulator version 15 for a 70nm CMOS process model also the transfer function realization is done on MATLAB R2011a version, the Very high speed integrated circuit Hardware description language(VHDL) code for the same scheme is simulated on Xilinx ISE 10.1 and various simulation results are obtained. Simulation results are included to demonstrate the results.
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篇名 On the Performance of ISFET-based Device for Water Quality Monitoring
来源期刊 通讯、网络与系统学国际期刊(英文) 学科 医学
关键词 ISFET Slew RATE CALIBRATION Simulation MONITORING APPLICATIONS
年,卷(期) 2011,(11) 所属期刊栏目
研究方向 页码范围 709-719
页数 11页 分类号 R73
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ISFET
Slew
RATE
CALIBRATION
Simulation
MONITORING
APPLICATIONS
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期刊影响力
通讯、网络与系统学国际期刊(英文)
月刊
1913-3715
武汉市江夏区汤逊湖北路38号光谷总部空间
出版文献量(篇)
763
总下载数(次)
1
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0
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