Nonvolatile memory devices based on organic field-effect transistors

• 来源期刊: 科学通报(英文版)
• 学科: 工学
• 年，卷（期）: 2011,（13）
• 页码范围: 1325-1332
• 页数: 8页
• 分类号: TN32
• 语种: 中文

摘要

Among the many possible device configurations for organic memory devices,organic field-effect transistor (OFET) memory is an emerging technology with the potential to realize lightweight,low-cost,flexible charge storage media.In this feature article,the recent progress in the classes of OFET-based memory,including floating gate OFET memory,polymer electret OFET memory,ferroelectric OFET memory and several other kinds of OFET memories with unique configurations,are introduced.Finally,the prospects and problems of OFETs memory are discussed.