Theoretical optimization of the characteristics of ZnO metal-semiconductor-metal photodetectors

• 来源期刊: 中国光学快报（英文版）
• 年，卷（期）: 2011,（11）
• 页码范围: 1-5
• 页数: 5页
• 语种: 英文
• DOI: 10.3788/COL201109.100401

摘要

A two-dimensional model of a metal-semiconductor-metal (MSM) ZnO-based photodetector (PD) is developed.The PD is based on a drift diffusion model of a semiconductor that allows the calculation of potential distribution inside the structure,the transversal and longitudinal distributions of the electric field,and the distribution of carrier concentration.The ohmicity of the contact has been confirmed.The dark current of MSM PD based ZnO for different structural dimensions are likewise calculated.The calculations are comparable with the experimental results.Therefore,the influence with respect to parameters s (finger spacing) and w (finger width) is studied,which results in the optimization of these parameters.The best optimization found to concur with the experimental results is s =16 μm,w =16 μm,l =250 μm,L =350 μm,where l is the finger length and L is the length of the structure.This optimization provides a simulated dark current equal to 24.5 nA at the polarization of 3 V.Extremely complex,integrated photonic circuits are developed and industrially produced.This is in consideration of the demand for low-cost high-bandwidth circuits,and the demand for knowledge control regarding the manufacturing processes of semiconductor optoelectronic components.The metal-semiconductor-metal (MSM) photodetector (PD) is a good choice in the photo detection field due to the simplicity of manufacture and suitability for monolithic integration[1,2].Indeed,the planar structure of MSM PD results in an exceptionally small capacity,which is highly desired for highbandwidth and low-noise performance[3].