Influence of post-annealing on the properties of Ta-doped In_2O_3 transparent conductive films

• 来源期刊: 科学通报(英文版)
• 学科: 工学
• 年，卷（期）: 2011,（15）
• 页码范围: 1535-1538
• 页数: 4页
• 分类号: TB383.2
• 语种: 中文

摘要

Ta-doped In2O3 transparent conductive oxide films were deposited on glass substrates using radio-frequency (RF) sputtering at 300°C.The influence of post-annealing on the structural,morphologic,electrical and optical properties of the films was investigated using X-ray diffraction,field emission scanning electron microscopy,Hall measurements and optical transmission spectroscopy.The obtained films were polycrystalline with a cubic structure and were preferentially oriented in the (222) crystallographic direction.The lowest resistivity,5.1*10 4 cm,was obtained in the film annealed at 500°C,which is half of that of the un-annealed film (9.9*10 4 cm).The average optical transmittance of the films was over 90%.The optical bandgap was found to decrease with increasing annealing temperature.