Effect of Doping and High-Temperature Annealing on the Structural and Electrical Properties of Zn1-xNixO（0≤X≤0.15） Powders

• 来源期刊: 材料科学技术学报：英文版
• 学科: 化学
• 关键词: 晶体结构 高温退火 电气性能 粉末 兴奋剂 扫描电子显微镜分析 合成样品 X射线衍射
• 年，卷（期）: 2011,（10）
• 页码范围: 944-950
• 页数: 7页
• 分类号: TQ174.758|O614.121
• 语种: 英文

摘要

This paper reported the synthesis, crystal structure and electrical conductivity properties of Ni-doped ZnO powders （i.e. Zn1-xNixO binary system, X=0, 0.0025, 0.005, 0.0075 and in the range 0.01≤X〈0.15）. I- phase samples, which were indexed as single phase with a hexagonal （wurtzite） structure in the Zn1-xNixO binary system, were determined by X-ray diffraction （XRD）. The widest range of the I-phase was determined as 0≤X≤0.03 at 1200℃; above this range the mixed phase was observed. The impurity phase was determined as NiO when compared with standard XRD data, using the PDF program. We focused on single f-phase ZnO samples which were synthesized at 1200℃ because of the widest range of solubility limit at this temperature. It was observed that the lattice parameters a and c of the I-phase decreased with Ni doping concentration. The morphology of the I-phase samples was analyzed with a scanning electron microscope. The electrical conductivity of the pure ZnO and single I-phase samples were studied by using the four-probe dc method at temperatures between 100 and 950℃ in air atmosphere. The electrical conductivity values of pure ZnO and 3 mol% Ni-doped ZnO samples at 100℃C were 2×10^-6 and 4.8×10^-6 Ω-1.cm^-1, and at 950℃ they were 1.8 and 3.6 Ω-1cm-1, respectively. In other words, electrical conductivity increased with Ni doping concentration.