Comparisonof GaN-Based Light-Emitting Diodes by Using the AlGaN Electron-Blocking Layer and InAIN Electron-Blocking Layer

• 作者: 庞玮 范广涵 郑树文 陈峻
• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2011,（12）
• 页码范围: 293-296
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/28/12/128501

摘要

Optical properties of GaN-based light-emitting diodes(LEDs)are studied numerically by using AlGaN and InAIN electron-blocking layers(EBLs).Through the simulations of emission spectra,carrier concentration distribution,energy band,electrostatic field,internal quantum efficiency and output power,the results show that the LEDs with design of the InAIN EBL structure have a better performance over the original LEDs using an AlGaN EBL.The spectrum intensity and output power are enhanced significantly,and the efficiency droop of internal quantum efficiency is improved effectively with this design of InAlN EBL structure.It is proved that the strengths of carrier confinement and electron leakage current play a critical role in the performance of luminescence in LEDs.