Study on the saturation characteristics of high-speed uni-traveling-carrier photodiodes based on field screening analysis

• 来源期刊: 中国光学快报（英文版）
• 年，卷（期）: 2011,（8）
• 页码范围: 79-82
• 页数: 4页
• 语种: 英文
• DOI: 10.3788/COL201109.082302

摘要

A back-illuminated mesa-structure InGaAs/InP charge-compensated uni-traveling-carrier(UTC) photodiode(PD) is fabricated,and its saturation characteristics are investigated.The responsivity of the 40-μmdiameter PD is as high as 0.83 A/W,and the direct current(DC) saturation current is up to 275 Ma.