Characteristics of the crystalline and luminescence properties of a-plane GaN films grown on γ-LiA102(302)substrates

• 来源期刊: 中国光学快报（英文版）
• 年，卷（期）: 2011,（9）
• 页码范围: 78-81
• 页数: 4页
• 语种: 英文
• DOI: 10.3788/COL201109.093101.

摘要

A-plane GaN films are deposited on(302)γ-LiA102 substrates by metalorganic chemical vapor deposition (MOCVD).The X-ray diffraction(XRD)results indicate that the in-plane orientation relationship between GaN and LAO substrates is [010]LAO//[0001]GaN and [203]LAO//[1100]GaN with 0.03% and 2.85% lattice mismatch,respectively.Raman scattering results indicate that the strain in the films decreases along with the increase in the thickness of the films.In addition to the band edge emission at 3.42 eV,defects-related luminescence at 3.35 eV is observed in the photoluminescence(PL)spectra.The cathodoluminescence (CL)spectra indicate that the 3.35-eV emission is related to the V pits.