Determination of breakdown voltage of In 0.53Ga 0.47As/InP single photon avalanche diodes
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摘要:
We examine the saturation of relative current gain of In0.53Ga0.47 As/InP single photon avalanche diodes (SPADs) operated in Geiger mode. The punch-through voltage and breakdown voltage of the SPADs can be measured using a simple and accurate method. The analysis method is temperature-independent and can be applied to most SPADs.