Ultraviolet photodetector with bandpass characteristic based on a blend of PVK and PBD
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摘要:
We fabricate an ultraviolet photodetector based on a blend of poly (N-vinylcarbazole) (PVK) and 2-tert-butylphenyl-5-biphenyl-1, 3, 4-oxadiazole (PBD) using spin coating.The device exhibites a low dark current density of 2.2×10-3 μA/cm2 at zero bias.The spectral response of the device shows a narrow bandpass characteristic from 300 to 355 nm, and the peak response is 18.6 mA/W located at 334 nm with a bias of -1 V.We also study the performances of photodetectors with different blend layer thicknesses.The largest photocurrent density is obtained with a blend of 90 nm at the same voltage.