Spectroscopic ellipsometric properties and resistance switching behavior in Six(ZrO2)100-x films
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摘要:
We prepare Six(ZrO2)100-x composite films using the co-sputtering method.The chemical structures of the films which are prepared under different conditions are analyzed with X-ray photoemission spectroscopy.Thermal treatment influences on optical property and resistance switching characteristics of these composite films are investigated by spectroscopic ellipsometry and semiconductor parameter analyzer, respectively.With the proper Si-doped Six (ZrO2)100-x interlayer, the Al/Six(ZrO2)100-x/A1 device cell samples present very reliable and reproducible switching behaviors.It provides a feasible solution for easy multilevel storage and better fault tolerance in nonvolatile memory application.