The p recombination layer in tunnel junctions for micromorph tandem solar cells

• 来源期刊: 中国物理B(英文版)
• 学科: 工学
• 关键词: 叠层太阳能电池 隧道结 复合层 微晶 挥发性有机化合物 氢化非晶硅 电压特性 氢化纳米硅
• 年，卷（期）: 2011,（7）
• 页码范围: 078402.1-078402.5
• 页数: 1页
• 分类号: TM914.42
• 语种: 英文
• DOI: 10.1088/1674-1056/20/7/078402

摘要

A new tunnel recombination junction is fabricated for n–i–p type micromorph tandem solar cells. We insert a thin heavily doped hydrogenated amorphous silicon (a-Si:H) p + recombination layer between the n a-Si:H and the p hydrogenated nanocrystalline silicon (nc-Si:H) layers to improve the performance of the n–i–p tandem solar cells. The effects of the boron doping gas ratio and the deposition time of the p-a-Si:H recombination layer on the tunnel recombination junctions have been investigated. The current-...