Improvement in the intense pulsed emission stability of grown CNT films via an electroless plated Ni layer

• 来源期刊: 科学通报(英文版)
• 学科: 物理学
• 年，卷（期）: 2011,（22）
• 页码范围: 2379-2382
• 页数: 4页
• 分类号: O484.1
• 语种: 中文

摘要

Carbon nanotube(CNT)films were grown on silicon wafers with and without a nickel layer(Si-CNT and Ni-CNT)via the pyrolysis of iron phthalocyanine.The nickel layer was prepared using the electroless plating method.To study the emission stability of Si-CNT and Ni-CNT cathodes during intense pulsed emission,emission characteristics were measured repeatedly with a diode structure using a Marx generator as a voltage source.For the peak values of the pulsed voltage,which were in the range between 1.62-1.66 MV(corresponding to electric field intensities between 11.57-11.85 V/μm),the first cycle emission current was 109.4 A for Si-CNT and 180.5 A for Ni-CNT.By comparing the normalized emission currents of the Si-CNT and Ni-CNT cathodes,the improvement in the emission stability can be easily quantified.The number of emission cycles necessary for the peak current to decay from 100%to 50%increased from~3 for Si-CNT to~11 for a Ni-CNT film.