Spectral Resolution Effects on the Lineshape of Photoreflectance

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2011,（4）
• 页码范围: 205-208
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/28/4/047801

摘要

Spectral resolution effects on the lineshape of photoreflectance(PR)spectroscopy is experimentally investigated.PR measurements are performed on HgCdTe epilayer and InAs/GaAs quantum dot(QD)low-dimensional samples at low temperatures in a spectral resolution range from 8 to 0.5meV.The results indicate that the resolution affects not only the identification of narrow PR features, but also the determination of critical-point energies of identified PR features, and a spectral resolution of as high as 0.5meV may be necessary for low-dimensional semiconductors.The spectral resolution is indeed a crucial parameter, for which the step-scan Fourier transform infrared spectrometer-based PR technique is preferable.